? semiconductor components industries, llc, 2012 august, 2012 ? rev. 1 1 publication order number: 2n2222a/d 2n2222a small signal switching transistor npn silicon features ? mil ? prf ? 19500/255 qualified ? available as jan, jantx, and jantxv maximum ratings (t a = 25 c unless otherwise noted) characteristic symbol value unit collector ? emitter voltage v ceo 50 vdc collector ? base voltage v cbo 75 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 800 madc total device dissipation @ t a = 25 c p t 500 mw total device dissipation @ t c = 25 c p t 1.0 w operating and storage junction temperature range t j , t stg ? 65 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 325 c/w thermal resistance, junction to case r jc 150 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. http://onsemi.com collector 3 2 base 1 emitter to ? 18 case 206aa style 1 device package shipping ordering information jan2n2222a jantx2n2222a to ? 18 bulk JANTXV2N2222A
2n2222a http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 10 madc) v (br)ceo 50 ? vdc collector ? base cutoff current (v cb = 75 vdc) (v cb = 60 vdc) i cbo ? ? 10 10 adc nadc emitter ? base cutoff current (v eb = 6.0 vdc) (v eb = 4.0 vdc) i ebo ? ? 10 10 adc nadc collector ? emitter cutoff current (v ce = 50 vdc) i ces ? 50 nadc on characteristics (note 1) dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 150 madc, v ce = 10 vdc) (i c = 500 madc, v ce = 10 vdc) h fe 50 75 100 100 30 ? 325 ? 300 ? ? collector ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.3 1.0 vdc base ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 ? 1.2 2.0 vdc small ? signal characteristics magnitude of small ? signal current gain (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) |h fe | 2.5 ? ? small ? signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1 khz) h fe 50 ? ? input capacitance (v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz) c ibo ? 25 pf output capacitance (v cb = 10 vdc, i e = 0,100 khz f 1.0 mhz ) c obo ? 8.0 pf switching (saturated) characteristics turn ? on time (reference figure in mil ? prf ? 19500/255) t on ? 35 ns turn ? off time (reference figure in mil ? prf ? 19500/255) t off ? 300 ns 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
2n2222a http://onsemi.com 3 package dimensions to ? 18 3 case 206aa issue a style 1: pin 1. emitter 2. base 3. collector seating plane r f b c k l p d 3x m h j s b 0.007 (0.18mm) c m a n dim min max min max inches millimeters a 0.209 0.230 5.31 5.84 b 0.178 0.195 4.52 4.95 c 0.170 0.210 4.32 5.33 d 0.016 0.021 0.41 0.53 e --- 0.030 --- 0.76 f 0.016 0.019 0.41 0.48 n 0.100 bsc 2.54 bsc h 0.036 0.046 0.91 1.17 j 0.028 0.048 0.71 1.22 k 0.500 0.750 12.70 19.05 l 0.250 --- 6.35 --- m 45 bsc 45 bsc r 0.054 bsc 1.37 bsc p --- 0.050 --- 1.27 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. dimension j measured from diameter a to edge. 4. lead true position to be determined at the guage plane defined by dimension r. 5. dimension f applies between dimension p and l. 6. dimension d applies between dimension l and k. 7. body contour optional within zone defined by dimen- sions a, b, and t. t --- 0.030 --- 0.76 u 0.100 --- 2.54 --- a b a detail x u note 5 notes 4 & 6 c u e 2 3 1 detail x note 7 t lead identification detail on semiconductor and are registered trademar ks of semiconductor components industries, llc (s cillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to an y products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of th e application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products ar e not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action em ployer. this literature is subject to all applicable copyrig ht laws and is not fo r resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 2n2222a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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